Last edited by Meztilmaran
Saturday, July 18, 2020 | History

3 edition of Thin [alpha]-Si:H emitter/SiGe base heterojunction bipolar transistors. found in the catalog.

Thin [alpha]-Si:H emitter/SiGe base heterojunction bipolar transistors.

Zhirong Tang

Thin [alpha]-Si:H emitter/SiGe base heterojunction bipolar transistors.

by Zhirong Tang

  • 145 Want to read
  • 24 Currently reading

Published .
Written in English


Edition Notes

Other titlesThin amorphous Si:H emitter/SiGe base heterojunction bipolar transistors.
The Physical Object
Pagination1 v. (various foliations).
ID Numbers
Open LibraryOL17407515M
ISBN 100612026817
OCLC/WorldCa46499874


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Thin [alpha]-Si:H emitter/SiGe base heterojunction bipolar transistors by Zhirong Tang Download PDF EPUB FB2

The band gap in heavily boron‐doped base regions of SiGe heterojunction bipolar transistors is determined from the temperature dependence of the collector saturation current J C0 in experimental Author: Tak Ning.

We have demonstrated the low-VBE operation of SiGeC heterojunction bipolar transistors by introducing a novel device design concept using the SiGe cap structure and high Ge- (up to 25%) and C.

Emitter collapse can be reduced in heterojunction bipolar transistors by the design symmetry and the spatial separation of the emitter regions. Hence, ordering of the emitter, base, and collector that are asymmetric in nature associated with the emitter design symmetry or allowing emitter spacing adjacency are more prone to these issues.

Silicon Germanium Transistor Emitter–Base Design Epitaxial-Base Heterojunction Bipolar Transistor (HBT) Emitter–Base Design Emitter–Base Design RF Frequency Performance Metrics SiGe HBT Emitter–Base Resistance Model SiGe HBT Emitter–Base Design and Silicide Placement Self-Aligned (SA) Emitter–Base.

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RF Technology and Circuits. Steven H. Voldman Vermont, USA" Download Document.